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Package / Case :
Maximum Operating Temperature :
Packaging :
Pd - Power Dissipation :
Technology :
Vds - Drain-Source Breakdown Voltage :
Transistor Type :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Output Power Pd - Power Dissipation Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Vgs - Gate-Source Breakdown Voltage Gain Transistor Type
ATF-52189-BLK
1+
$5.820
10+
$4.940
100+
$4.280
200+
$4.060
RFQ
170
In-stock
Avago / Broadcom RF JFET Transistors Transistor GaAs High Linearity SMD/SMT SOT-89 + 150 C Bulk   1.5 W GaAs   7 V 500 mA - 5 V to 1 V 16 dB EpHEMT
ATF-521P8-BLK
1+
$5.820
10+
$4.940
100+
$4.280
200+
$4.060
RFQ
155
In-stock
Avago / Broadcom RF JFET Transistors Transistor GaAs High Linearity SMD/SMT LPCC-8 + 150 C Bulk   1.5 W GaAs   7 V 500 mA - 5 V to 1 V 17 dB EpHEMT
ATF-52189-TR1
3000+
$2.730
VIEW
RFQ
Avago / Broadcom RF JFET Transistors Transistor GaAs High Linearity SMD/SMT SOT-89 + 150 C Reel   1.5 W GaAs   7 V 500 mA - 5 V to 1 V 16 dB EpHEMT
MAGX-000035-01000TP
500+
$36.400
VIEW
RFQ
MACOM RF JFET Transistors DC-3.5GHz Gain 14dB GaN SiC SMD/SMT   + 95 C Reel 10 W 12 W GaN SiC N-Channel 65 V 500 mA   14 dB HEMT
ATF-521P8-TR2
10000+
$2.460
VIEW
RFQ
Avago / Broadcom RF JFET Transistors Transistor GaAs High Linearity SMD/SMT LPCC-8 + 150 C Reel   1.5 W GaAs   7 V 500 mA - 5 V to 1 V 17 dB EpHEMT
ATF-521P8-TR1
3000+
$2.730
VIEW
RFQ
Avago / Broadcom RF JFET Transistors Transistor GaAs High Linearity SMD/SMT LPCC-8 + 150 C Reel   1.5 W GaAs   7 V 500 mA - 5 V to 1 V 17 dB EpHEMT
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