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Package / Case :
Packaging :
Pd - Power Dissipation :
Technology :
Vds - Drain-Source Breakdown Voltage :
Vgs - Gate-Source Breakdown Voltage :
Transistor Type :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Vgs - Gate-Source Breakdown Voltage Gain Transistor Type
BF862
Per Unit
$0.530
RFQ
200,410
In-stock
NXP Semiconductors RF JFET Transistors JFET N-CH 20V 10MA SMD/SMT SOT-23   Reel 300 mW Si N-Channel 20 V 40 mA - 20 V   JFET
PMBFJ109,215
1+
$0.440
10+
$0.362
100+
$0.221
1000+
$0.171
3000+
$0.145
RFQ
6,005
In-stock
NXP Semiconductors RF JFET Transistors TAPE7 FET-RFSS SMD/SMT SOT-23   Reel 250 mW Si N-Channel 25 V 40 mA - 25 V   JFET
ATF-36163-BLKG
1+
$1.210
10+
$0.971
100+
$0.783
500+
$0.692
RFQ
560
In-stock
Avago / Broadcom RF JFET Transistors Transistor GaAs High Frequency SMD/SMT SOT-363 + 150 C Bulk 180 mW GaAs   3 V 40 mA - 3 V 10 dB pHEMT
ATF-36163-TR1G
1+
$1.210
10+
$0.971
100+
$0.783
500+
$0.692
3000+
$0.510
RFQ
517
In-stock
Avago / Broadcom RF JFET Transistors Transistor GaAs High Frequency SMD/SMT SOT-363 + 150 C Reel 180 mW GaAs   3 V 40 mA - 3 V 10 dB pHEMT
ATF-36163-TR2G
10000+
$0.435
20000+
$0.422
VIEW
RFQ
Avago / Broadcom RF JFET Transistors Transistor GaAs High Frequency SMD/SMT SOT-363 + 150 C Reel 180 mW GaAs   3 V 40 mA - 3 V 10 dB pHEMT
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