Build a global manufacturer and supplier trusted trading platform.
Mounting Style :
Package / Case :
Maximum Operating Temperature :
Packaging :
Pd - Power Dissipation :
Technology :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Vgs - Gate-Source Breakdown Voltage :
Maximum Drain Gate Voltage :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Output Power Pd - Power Dissipation Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Vgs - Gate-Source Breakdown Voltage Gain Transistor Type Maximum Drain Gate Voltage
CGHV27030S
1+
$51.100
250+
$51.100
RFQ
323
In-stock
Wolfspeed / Cree RF JFET Transistors GaN HEMT DC-6.0GHz, 30 Watt SMD/SMT 3x4 DFN + 150 C Reel 30 W 12 W GaN N-Channel 150 V 3.6 A - 10 V, 2 V 21 dB HEMT 50 V
Default Photo
1+
$197.000
RFQ
50
In-stock
Wolfspeed / Cree RF JFET Transistors GaN HEMT UHF-2.5GHz, 120 Watt Screw 440095 + 150 C Tray 20 W 56 W GaN N-Channel 120 V 28 A - 10 V, 2 V 21 dB HEMT 28 V
NPT2022
1+
$164.660
10+
$158.560
RFQ
4
In-stock
MACOM RF JFET Transistors DC-2.0GHz 100W Gain 20dB GaN HEMT Screw   + 85 C Tray 100 W   GaN Si N-Channel 160 V 24 mA 3 V 21 dB HEMT  
Page 1 / 1