- Manufacture :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Technology :
- Vgs - Gate-Source Breakdown Voltage :
- Applied Filters :
3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Output Power | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Vgs - Gate-Source Breakdown Voltage | Gain | Transistor Type | Maximum Drain Gate Voltage | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
323
In-stock
|
Wolfspeed / Cree | RF JFET Transistors GaN HEMT DC-6.0GHz, 30 Watt | SMD/SMT | 3x4 DFN | + 150 C | Reel | 30 W | 12 W | GaN | N-Channel | 150 V | 3.6 A | - 10 V, 2 V | 21 dB | HEMT | 50 V | ||||
|
50
In-stock
|
Wolfspeed / Cree | RF JFET Transistors GaN HEMT UHF-2.5GHz, 120 Watt | Screw | 440095 | + 150 C | Tray | 20 W | 56 W | GaN | N-Channel | 120 V | 28 A | - 10 V, 2 V | 21 dB | HEMT | 28 V | ||||
|
4
In-stock
|
MACOM | RF JFET Transistors DC-2.0GHz 100W Gain 20dB GaN HEMT | Screw | + 85 C | Tray | 100 W | GaN Si | N-Channel | 160 V | 24 mA | 3 V | 21 dB | HEMT |