- Manufacture :
- Mounting Style :
- Package / Case :
- Technology :
- Id - Continuous Drain Current :
- Vgs - Gate-Source Breakdown Voltage :
- Applied Filters :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Output Power | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Vgs - Gate-Source Breakdown Voltage | Gain | Transistor Type | Maximum Drain Gate Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
26
In-stock
|
Wolfspeed / Cree | RF JFET Transistors GaN HEMT 1.2-1.4GHz, 500 Watt | Screw | 440117 | + 130 C | Tube | 510 W | - | GaN | N-Channel | 150 V | 36 A | - 10 V to + 2 V | 17.1 dB | HEMT | - | |||
|
|
60
In-stock
|
Qorvo | RF JFET Transistors .03-3GHz Gain 17dB P3dB 9.3W@2.4GHz GaN | SMD/SMT | QFN-EP-16 | Tray | 11 W | 15.3 W | GaN SiC | N-Channel | 32 V | 557 mA | - 2.7 V | 17.1 dB | HEMT |
