- Package / Case :
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
- Maximum DC Collector Current :
- Applied Filters :
6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Series | Configuration | Transistor Polarity | Collector- Emitter Voltage VCEO Max | Emitter- Base Voltage VEBO | Collector-Emitter Saturation Voltage | Maximum DC Collector Current | Gain Bandwidth Product fT | |
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4,840
In-stock
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Toshiba | Bipolar Transistors - BJT Dual Trans PNP x 2 SM6, -50V, -0.15A | SMD/SMT | SM-6 | + 125 C | HN1A01 | Dual | PNP | 50 V | 5 V | 0.1 V | 150 mA | 80 MHz | ||||
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58,900
In-stock
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Toshiba | Bipolar Transistors - BJT US6 PLN TRANSISTOR Pd=200mW F=1... | SMD/SMT | US-6 | HN1A01 | PNP | - 50 V | - 5 V | - 0.1 V | - 150 mA | 80 MHz | ||||||
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2,843
In-stock
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Toshiba | Bipolar Transistors - BJT Dual Trans PNP x 2 SM6, -50V, -0.15A | SMD/SMT | SOT-26-6 | + 125 C | HN1A01 | Dual | PNP | 50 V | 5 V | 0.1 V | 150 mA | 80 MHz | ||||
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3,880
In-stock
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Toshiba | Bipolar Transistors - BJT Bias Resistor Built-in transistor | SMD/SMT | ES6-6 | HN1A01 | PNP | - 50 V | - 5 V | - 0.3 V | - 150 mA | 80 MHz | ||||||
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VIEW | Toshiba | Bipolar Transistors - BJT ES6 PLN | SMD/SMT | ES6-6 | HN1A01 | PNP | - 50 V | - 5 V | - 0.1 V | - 150 mA | 80 MHz | ||||||
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VIEW | Toshiba | Bipolar Transistors - BJT Transistor for Low Freq Sm-Signal Amp | HN1A01 |