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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Configuration Mounting Type Operating Temperature Part Status Input Factory Stock Minimum Quantity Power - Max IGBT Type Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Vce(on) (Max) @ Vge, Ic Current - Collector Cutoff (Max) Input Capacitance (Cies) @ Vce NTC Thermistor Gate Charge Td (on/off) @ 25°C Test Condition
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Infineon Technologies IGBT CHIP WAFER Die - Bulk   Surface Mount -40°C ~ 175°C (TJ) Active   0 1100 - Trench Field Stop 1200V 35A 2.2V @ 15V, 25A       170nC 50ns/280ns 600V, 35A, 10 Ohm, 15V
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Infineon Technologies IGBT F1235R12KT4GBOSA1 Module -   Single Chassis Mount -40°C ~ 150°C (TJ) Obsolete Standard 0 10 210W Trench Field Stop 1200V 35A 2.15V @ 15V, 35A 1mA 2nF @ 25V No      
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