- Pd - Power Dissipation :
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- Collector- Emitter Voltage VCEO Max :
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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
13,000
In-stock
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Infineon Technologies | IGBT Modules N-CH 1.7KV 1.3KA | IGBT Silicon Modules | IHM | + 125 C | 6.25 W | Dual | 1700 V | 2.6 V | 1300 A | 400 nA | ||
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162
In-stock
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Infineon Technologies | IGBT Modules 3300V 800A SINGLE | IGBT Silicon Modules | IHM | + 125 C | 9.6 kW | Single | 3300 V | 3.4 V | 1300 A | 400 nA |
