- Manufacture :
- Pd - Power Dissipation :
- Configuration :
- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
10 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
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GET PRICE |
12,600
In-stock
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Infineon Technologies | IGBT Modules IGBT 1200V 400A | IGBT Silicon Modules | Module | + 150 C | 2400 W | Single | 1.2 kV | 1.75 V | 400 A | 400 nA | ||||
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2
In-stock
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Infineon Technologies | IGBT Modules | IGBT Silicon Modules | EasyPack1B | + 150 C | 275 W | 3-Phase | 1.2 kV | 1.45 V | 45 A | 100 nA | |||||
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8
In-stock
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IXYS | IGBT Modules Mid-Frequency Range 15khz-40khz w/ Diode | IGBT Silicon Modules | SOT-227B-4 | + 150 C | Tube | Single | 1.2 kV | 2.7 V | 145 A | +/- 200 nA | |||||
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26
In-stock
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IXYS | IGBT Modules High Frequency Range 40khz C-IGBT w/Diode | IGBT Silicon Modules | TO-247AD-3 | + 150 C | Tube | Single | 1.2 kV | 3.6 V | 48 A | +/- 100 nA | |||||
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21
In-stock
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IXYS | IGBT Modules Low-Frequency Range Low Vcesat w/ Diode | IGBT Silicon Modules | TO-264-3 | + 150 C | Tube | Single | 1.2 kV | 1.85 V | 125 A | +/- 100 nA | |||||
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76
In-stock
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IXYS | IGBT Modules GenX3 1200V IGBTs | IGBT Silicon Modules | TO-220AB-3 | + 150 C | Tube | Single | 1.2 kV | 2.4 V | 22 A | +/- 100 nA | |||||
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VIEW | IXYS | IGBT Modules High Frequency Range 40khz C-IGBT w/Diode | IGBT Silicon Modules | TO-247AD-3 | + 150 C | Tube | Single | 1.2 kV | 2.2 V | 70 A | +/- 100 nA | |||||
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VIEW | IXYS | IGBT Modules GenX3 1200V IGBTs | IGBT Silicon Modules | TO-247-3 | + 150 C | Tube | Single | 1.2 kV | 2.4 V | 22 A | +/- 100 nA | |||||
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VIEW | IXYS | IGBT Modules High Frequency Range 40khz C-IGBT w/Diode | IGBT Silicon Modules | TO-264-3 | + 150 C | Tube | Single | 1.2 kV | 2.6 V | 95 A | +/- 100 nA | |||||
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VIEW | IXYS | IGBT Modules High Frequency Range 40khz C-IGBT w/Diode | IGBT Silicon Modules | PLUS247-3 | + 150 C | Single | 1.2 kV | 2.6 V | 95 A | +/- 100 nA |