- Manufacture :
- Package / Case :
- Maximum Operating Temperature :
- Pd - Power Dissipation :
- Configuration :
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
9 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
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GET PRICE |
12,600
In-stock
|
Infineon Technologies | IGBT Modules IGBT 1200V 400A | IGBT Silicon Modules | Module | + 150 C | 2400 W | Single | 1.2 kV | 1.75 V | 400 A | 400 nA | ||||
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5
In-stock
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Infineon Technologies | IGBT Modules HYBRID PACK 2 | IGBT Silicon Modules | HybridPack2 | + 150 C | 1500 W | 3-Phase | 1200 V | 1.8 V | 400 A | 400 nA | |||||
|
GET PRICE |
19,200
In-stock
|
Infineon Technologies | IGBT Modules N-CH 600V 400A | IGBT Silicon Modules | 62 mm | + 150 C | Dual | 600 V | 400 A | |||||||
|
10
In-stock
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Infineon Technologies | IGBT Modules IGBT-MODULE | IGBT Silicon Modules | 62 mm | + 150 C | Single | 600 V | 400 A | ||||||||
|
200
In-stock
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Infineon Technologies | IGBT Modules IGBT 1200V 400A | IGBT Silicon Modules | + 150 C | Tray | 2400 W | 1200 V | 2.05 V | 400 A | 400 nA | ||||||
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4
In-stock
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Infineon Technologies | IGBT Modules | IGBT Silicon Modules | Module | + 125 C | - | Dual | 1200 V | 1.7 V | 400 A | 400 nA | |||||
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VIEW | IXYS | IGBT Modules GenX3 600V IGBTs | IGBT Silicon Modules | TO-247-3 | + 150 C | Tube | Single | 600 V | 1.59 V | 400 A | +/- 100 nA | |||||
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61
In-stock
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Infineon Technologies | IGBT Modules N-CH 1.7KV 400A | IGBT Silicon Modules | 62 mm | + 125 C | Single Dual Emitter | 1700 V | 400 A | ||||||||
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240
In-stock
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Infineon Technologies | IGBT Modules 1700V 200A DUAL | IGBT Silicon Modules | 62 mm | + 125 C | 1660 W | Dual | 1700 V | 2.6 V | 400 A | 400 nA |