- Maximum Operating Temperature :
- Configuration :
- Collector- Emitter Voltage VCEO Max :
- Gate-Emitter Leakage Current :
- Applied Filters :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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110
In-stock
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Infineon Technologies | IGBT Modules 1200V 300A SINGLE | IGBT Silicon Modules | 62 mm | + 150 C | Tray | 2500 W | Single | 1200 V | 2.5 V | 430 A | 320 nA | |||
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160
In-stock
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Infineon Technologies | IGBT Modules 1200V 300A DUAL | IGBT Silicon Modules | 62 mm | + 125 C | 2500 W | Dual | 1200 V | 2.1 V | 625 A | 400 nA | ||||
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100
In-stock
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Infineon Technologies | IGBT Modules 1200V 400A SINGLE | IGBT Silicon Modules | 62 mm | + 125 C | 2500 W | Single Dual Emitter | 1200 V | 2.1 V | 625 A | 400 nA | ||||
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61
In-stock
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Infineon Technologies | IGBT Modules IGBT 1700V 450A | IGBT Silicon Modules | + 150 C | 2500 W | Dual | 1700 V | 2.3 V | 600 A | 400 nA |
