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4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | Package | RoHS | |
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85
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Infineon Technologies | IGBT Modules | - 40 C | + 125 C | Box | 2500 W | 1200 V | 3.2 V | 400 A | 400 nA | 20 V | Module | 100% Green available | |||||
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160
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Infineon Technologies | IGBT Modules 1200V 300A DUAL | IGBT Silicon Modules | 62 mm | + 125 C | 2500 W | Dual | 1200 V | 2.1 V | 625 A | 400 nA | ||||||||
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100
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Infineon Technologies | IGBT Modules 1200V 400A SINGLE | IGBT Silicon Modules | 62 mm | + 125 C | 2500 W | Single Dual Emitter | 1200 V | 2.1 V | 625 A | 400 nA | ||||||||
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61
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Infineon Technologies | IGBT Modules IGBT 1700V 450A | IGBT Silicon Modules | + 150 C | 2500 W | Dual | 1700 V | 2.3 V | 600 A | 400 nA |
