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| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Packaging | Operating Frequency | Output Power | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Vgs - Gate-Source Breakdown Voltage | Gain | Package | Factory Pack Quantity | RoHS | |
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450
In-stock
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MACOM | RF JFET Transistors GaN HEMT DC-8.0GHz, 10 Watt | Tray | DC to 6 GHz | 10 W | GaN | N-Channel | 120 V | 1.5 A | - 10 V, 2 V | 16.5 dB | Module | 1 | Green available |
