- Manufacture :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Packaging :
- Length :
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- Pd - Power Dissipation :
- Configuration :
- Rds On - Drain-Source Resistance :
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4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vf - Forward Voltage | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Series | Packaging | Number of Channels | Length | Width | Height | Pd - Power Dissipation | Configuration | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Channel Mode | Output Type | Isolation Voltage | Maximum Collector Emitter Voltage | Maximum Collector Current | Maximum Collector Emitter Saturation Voltage | Current Transfer Ratio | Rise Time | Fall Time | Transistor Type | Product Type | Typical Turn-Off Delay Time | Typical Turn-On Delay Time | Factory Pack Quantity | |
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GET PRICE |
11,150
In-stock
|
onsemi | MOSFET 30V Dual SyncFET | 16 V, 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Cut Tape | 2 Channel | 4.9 mm | 3.9 mm | 1.75 mm | 2 W | Dual | Si | N-Channel | 30 V | 6.5 A | 29 mOhms | Enhancement | 4.5 ns, 5 ns | 2.5 ns, 11 ns | 2 N-Channel | 20 ns, 25 ns | 7 ns, 8 ns | 2500 | ||||||||||||
|
GET PRICE |
6,551
In-stock
|
Toshiba Semiconductor | MOSFET 220NIS2 PLN,DISCON(08-10)/PHASE-OUT(11-01)/OB... | 30 V | SMD/SMT | SC-62-3 | - 55 C | + 150 C | Reel | 1 Channel | 4.6 mm | 2.5 mm | 1.6 mm | 40 W | Single | Si | N-Channel | 500 V | 12 A | 520 mOhms | Enhancement | 22 ns | 36 ns | 1 N-Channel | 50 | ||||||||||||||
|
GET PRICE |
24,500
In-stock
|
Toshiba Semiconductor | Transistor Output Optocouplers AC input 80V 3750Vrms | 1.3 V | SMD/SMT | SOP-4 | - 55 C | + 100 C | TLP180 | 1 Channel | 3.6 mm | 4.4 mm | 2.5 mm | 200 mW | 1 Channel | NPN Phototransistor | 3750 Vrms | 80 V | 50 mA | 0.2 V | 600 % | Transistor Output Optocouplers | |||||||||||||||||
|
GET PRICE |
45,000
In-stock
|
Toshiba Semiconductor | MOSFET | 12 V | SMD/SMT | TSSOP-Advance-8 | - 55 C | + 150 C | 2 Channel | 3.65 mm | 3.5 mm | 0.75 mm | 1.1 W | Dual | Si | N-Channel | 20 V | 6 A | 17 mOhms | Enhancement | 5 ns | 10 ns |